Transistors
1
Publication date: April 2003 SJC00088BED
2SB1462L
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216L
■ Features
• High forward current transfer ratio h
FE
• Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−60 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−7V
Collector current I
C
−100 mA
Peak collector current I
CP
−200 mA
Collector power dissipation
*
P
C
150 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note)
*
: Print circuit board: Copper foil area of 20.0 mm
2
or more, and the
board thickness of 1.6 mm for the collector portion
Marking Symbol: J
0.80
±
0.05
0.05
±
0.03
0.20
±
0.03
0.50
1.00±0.05 0.60±0.05
0.60 0.05±0.03
0.30±0.03
0.020±0.010
1
2
4
3
2
1
3
4
Unit: mm
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emiter open) V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −100 µA, I
B
= 0 −50 V
Emiter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −10 V, I
B
= 0 −100 µA
Forward current transfer ratio h
FE
V
CE
= −10 V, I
C
= −2mA 180 390 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA − 0.3 − 0.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 2.7 pF
(Common base, input open circuited)