2SB1183 / 2SB1239
Transistors
Power transistor (−40V, −2A)
2SB1183 / 2SB1239
!Features
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1759 / 2SD1861.
!Equivalent circuit
RBE 4kΩ
C
B
E
C
B
E
: Collector
: Base
: Emitter
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCER
VEBO
IC
PC
Tj
Tstg
Limits
−40
−40
−5
−2
1
10
2SB1183
2SB1239
150
−55~+150
Unit
V
V
V
A(DC)
−3 ∗1
∗2
A(Pulse)
W
W(Tc=25°C)
1W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=10ms
∗2 Printed circuit board 1.7 mm thick, collector plating 100mm
2
or larger.
!Packaging specifications and hFE
Type 2SB1183
CPT3
1k~200k
TL
2500
2SB1239
ATV
1k~
T146
2500
Package
hFE
Code
Basic ordering unit (pieces)
!External dimensions (Units : mm)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2.3
0.51.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
5.1
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1183
ROHM : CPT3
EIAJ : SC-63
2SB1239
ROHM : ATV
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCER
BVEBO
ICBO
IEBO
VCE(sat)
hFE
2SB1183
2SB1239
Cob
−40
−40
−5
−
−
−
1000
−
−
−
−
−
−
−
−
11
−
−
−
−1
−1
−1.5
20000
−
V
V
V
µA
µA
V
−
pF
IC=−50µA
IC=−1mA, RBE=10kΩ
IE=−50µA
VCB=−24V
VEB=−4V
IC/IB=−0.6A/−1.2mA
VCE/IC=−2V/−0.5A
1000 −− −
VCB=−10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Output capacitance