Transistors
1
Publication date: May 2003 SJC00048CED
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■ Features
• Large collector current I
C
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Parameter Symbol Rating Unit
Collector-base voltage 2SB0710 V
CBO
−30 V
(Emitter open) 2SB0710A −60
Collector-emitter voltage 2SB0710 V
CEO
−25 V
(Base open) 2SB0710A −50
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
− 0.5 A
Peak collector current I
CP
−1A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note) The part numbers in the parenthesis show conventional part number.
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
2SB0710 V
CBO
I
C
= −10 µA, I
E
= 0 −30 V
(Emitter open)
2SB0710A −60
Collector-emitter voltage
2SB0710 V
CEO
I
C
= −10 mA, I
B
= 0 −25 V
(Base open)
2SB0710A −50
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= −10 V, I
C
= −150 mA 85 340 
h
FE2
V
CE
= −10 V, I
C
= −500 mA 40 
Collector-emitter saturation voltage
*
1
V
CE(sat)
I
C
= −300 mA, I
B
= −30 mA − 0.35 − 0.60 V
Base-emitter saturation voltage
*
1
V
BE(sat)
I
C
= −300 mA, I
B
= −30 mA −1.1 −1.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
Marking Symbol:
• 2SB0710: C
• 2SB0710A: D
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking
2SB0710 CQ CR CS C
symbol
2SB0710A DQ DR DS D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Product of no-rank is not
classified and have no
marking symbol for rank.