BIPOLARICS, INC. Part Number BPT1819E03
NPN SILICON MICROWAVE POWER TRANSISTORS
DESCRIPTION AND APPLICATIONS:
Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor
intended for linear power applications at frequencies of 1.8 to 1.9 GHz.
Typical applications include amplifiers in aeronautical, maritime and
personal communication applications. The BPT1819E03 is bonded
common emitter for linear applications. Linear output power of 3
Watts can be achieved. BeO flange packaging makes this device
excellent for industrial and military products. Uniformity and reliability
are assured by the use of ion implanted junctions, ion implanted ballast
resistors and gold metallization.
Absolute Maximum Ratings:
SYMBOL PARAMETERS RATING UNITS
V
CES
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 20 V
V
EBO
Emitter-Base Voltage 3.0 V
I
C
Collector Current 960 mA
T
J
Junction Temperature 200
o
C
T
STG
Storage Temperature -65 to 200
o
C
θJC Thermal Resistance 11 C/W
V
CE
= 8.0V, I
C
= 400 mA
I
E
= 0
P
T
Total Power Dissipation W 12
V
CE
= 15V, I
C
= 480 mA, Class A,Common Emitter unless stated
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
PRODUCT DATA SHEET
FEATURES:
• High Output Power
3 W @ 1.8 GHz
• High Gain Bandwidth Product
f
t
= 6.0 GHz typ @ I
C
= 480 mA
• High Gain
G
PE
=
10.0 dB @ 1.8 GHz
• Gold Metallization System
• High thermal efficiency BeO 6 Lead
Flange package (package 36)
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
o
C)
BVCEO Collector-Emitter Breakdown Voltage IC = 0.1 mA V 20
P
1dB
Output Power at 1dB compression f = 1.8 GHz W 3.0
G
PE
Class A P
OUT
= 4 W f = 1.8 GHz dB 10.0
η Efficiency: Class A % 30
Class C 65
h
FE
Forward Current Transfer Ratio: f = 1.0 MHz 20 60 100
C
CB
Collector Base Capacitance: f = 1.0 MHz pF 8.0