2SD2115(L)/(S)
器件描述：Silicon NPN Epitaxial Planar(Low frequency power amplifier)
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：31.43KB，共5页
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2SD2115(L)/(S)
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
150 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2A
Collector peak current I
C(peak)
2.5 A
Collector power dissipation P
C
*
1
18 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon NPN Epitaxial Planar
Application
Low frequency power amplifier
Outline
4
1
2
3
4
3
2
1
1. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V
CBO
150 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2A
Collector peak current I
C(peak)
2.5 A
Collector power dissipation P
C
*
1
18 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.