1
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD1423 and 2SD1423A
n
Features
l Optimum for high-density mounting.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SB1030
2SB1030A
2SB1030
2SB1030A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
*2
V
CE
= –10V, I
C
= –500mA
*2
I
C
= –300mA, I
B
= –30mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–30
–60
–25
–50
–7
85
40
typ
– 0.35
200
6
max
– 0.1
–1
340
– 0.6
15
Unit
m A
m A
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
2SB1030
2SB1030A
2SB1030
2SB1030A
*2
Pulse measurement