2SA1832FT
2002-01-16 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832FT

Audio frequency General Purpose Amplifier Applications



Gb7G20 High voltage: V
CEO
= −50 V
Gb7G20 High current: I
C
= −150 mA (max)
Gb7G20 High h
FE
: h
FE
= 120 to 400
Gb7G20 Excellent h
FE
linearity
: h
FE
(I
C
= −0.1 mA)/h
FE
(I
C
= −2 mA) = 0.95 (typ.)
Gb7G20 Complementary to 2SC4738F

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
G2d50 V
Collector-emitter voltage V
CEO
G2d50 V
Emitter-base voltage V
EBO
G2d5 V
Collector current I
C
G2d150 mA
Base current I
B
G2d30 mW
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 Gb0C
Storage temperature range T
stg
G2d55 to 125 Gb0C

Marking


Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d G2d50 V, I
E
G3d 0 GbeG20 Gbe G2d0.1 G6dA
Emitter cut-off current I
EBO
V
EB
G3d G2d5 V, I
C
G3d 0 GbeG20 GbeG20 G2d0.1 G6dA
DC current gain
h
FE
(Note)
V
CE
G3d G2d6 V, I
B
G3d G2d2 mA 120 GbeG20 400
Collector-emitter saturation voltage V
CE (sat)
I
C
G3d G2d100 mA, I
B
G3d G2d10 mA ― G2d0.1 G2d0.3 V
Transition frequency f
T
V
CE
G3d G2d10 V, I
C
G3d G2d1 mA 80 GbeG20 GbeG20 MHz
Collector output capacitance C
ob
V
CB
G3d G2d10 V, I
E
G3d 0, f G3d 1 MHz GbeG20 4 7 pF
Note: h
FE
Classification Y (Y): 120 to 140, GR (G): 200 to 400
( ) Marking symbol

Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 2-1B1A

Type Name
S Y
h
FE
Rank