Transistors
1
Publication date: July 2003 SJC00291AED
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−30 V
Collector-emitter voltage (Base open) V
CEO
−20 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−30 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank B C
h
FE
70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Unit: mm
Marking Symbol: E
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage V
BE
V
CE
= −10 V, I
C
= −1 mA − 0.7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −10 V, I
E
= 0 − 0.1 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −20 V, I
B
= 0 −100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= −5 V, I
C
= 0 −10 µA
Forward current transfer ratio
*
h
FE
V
CE
= −10 V, I
C
= −1 mA 70 220 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA − 0.1 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF V
CB
= −10 V, I
E
= 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
= −10 V, I
E
= 1 mA, f = 2 MHz 22 50 Ω
Reverse transfer capacitance (Common emitter) C
re
V
CB
= −10 V, I
E
= 1 mA, f = 10.7 MHz 1.2 2.0 pF