2SA1015(L)
2003-03-27 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)

Audio Frequency Amplifier Applications
Low Noise Amplifier Applications


Gb7G20 High voltage and high current: V
CEO
= −50 V (min),
I
C
= −150 mA (max)
Gb7G20 Excellent h
FE
linearity: h
FE
(2) = 80 (typ.) at V
CE
= −6 V, I
C
= −150 mA
: h
FE
(I
C
= −0.1 mA)/h
FE
(I
C
= −2 mA) = 0.95 (typ.)
Gb7G20 Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
Gb7G20 Complementary to 2SC1815 (L)

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
G2d50 V
Collector-emitter voltage V
CEO
G2d50 V
Emitter-base voltage V
EBO
G2d5 V
Collector current I
C
G2d150 mA
Base current I
B
G2d50 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C

Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d G2d50 V, I
E
G3d 0 GbeG20 Gbe G2d0.1 G6dA
Emitter cut-off current I
EBO
V
EB
G3d G2d5 V, I
C
G3d 0 Gbe Gbe G2d0.1 G6dA
h
FE (1)

(Note)
V
CE
G3d G2d6 V, I
C
G3d G2d2 mA 70 Gbe 400
DC current gain
h
FE (2)
V
CE
G3d G2d6 V, I
C
G3d G2d150 mA 25 80 Gbe

Collector-emitter saturation voltage V
CE (sat)
I
C
G3d G2d100 mA, I
B
G3d G2d10 mA Gbe G2d0.1 G2d0.3 V
Base-emitter saturation voltage V
BE (sat)
I
C
G3d G2d100 mA, I
B
G3d G2d10 mA Gbe Gbe G2d1.1 V
Transition frequency f
T
V
CE
G3d G2d10 V, I
C
G3d G2d1 mA 80 Gbe Gbe MHz
Collector output capacitance C
ob

V
CB
G3d G2d10 V, I
E
G3d 0
f G3d 1 MHz
Gbe 4 7 pF
Base intrinsic resistance r
bb’

V
CB
G3d G2d10 V, I
E
G3d 1 mA
f G3d 30 MHz
Gbe 30 Gbe G57
NF (1)
V
CE
G3d G2d6 V, I
C
G3d G2d0.1 mA
f G3d 100 Hz, R
G
G3d 10 kG57
Gbe 0.5 6
Noise figure
NF (2)
V
CE
G3d G2d6 V, I
C
G3d G2d0.1 mA
f G3d 1 kHz, R
G
G3d 10 kG57
Gbe 0.2 3
dB
Note: h
FE (1)
classification O: 70~140, Y: 120~240, GR: 200~400

Unit: mm



JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)