Transistors
1
Publication date: January 2003 SJC00007BED
2SA0921 (2SA921)
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
■ Features
• High collector-emitter voltage (Base open) V
CEO
• Low noise voltage NV
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−120 V
Collector-emitter voltage (Base open) V
CEO
−120 V
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−20 mA
Peak collector current I
CP
−50 mA
Collector power dissipation P
C
250 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −10 µA, I
E
= 0 −120 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −1 mA, I
B
= 0 −120 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −50 V, I
E
= 0 −100 nA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −50 V, I
B
= 0 −1 µA
Forward current transfer ratio
*
h
FE
V
CE
= −5 V, I
C
= −2 mA 180 700 
Collector-emitter saturation voltage V
CE(sat)
I
C
= −20 mA, I
B
= −2 mA − 0.6 V
Transition frequency f
T
V
CB
= −5 V, I
E
= 2 mA, f = 200 MHz 200 MHz
Noise voltage NV V
CE
= −40 V, I
C
= −1 mA, G
V
= 80 dB 150 mV
R
g
= 100 kΩ, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700