1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
a73 Low collector-emitter saturation voltage V
CEsat
a73 High collector current capability: I
C
and I
CM
a73 High collector current gain (h
FE
) at high I
C
a73 High efficiency due to less heat generation
a73 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
a73 DC-to-DC conversion
a73 MOSFET gate driving
a73 Motor control
a73 Charging circuits
a73 Power switches (e.g. motors, fans)
a73 Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
2PD2150
20 V, 3 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 22 April 2005 Product data sheet
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 20 V
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--3A
h
FE
DC current gain V
CE
=2V;
I
C
= 0.1 A
180 - 390