TECHNICAL DATA

PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/621
Devices Qualified Level
2N7369




JAN
JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector - Emitter Voltage V CEO 80 Vdc
Collector - Base Voltage V CBO 80 Vdc
Emitter - Base Voltage V EBO 7.0 Vdc
Base Current I B 4.0 Adc
Collector Current I C 10 Adc
Total Power Dissipation @ T C = +25 0 C (1) P T 115 W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case R θJC 1.5 0 C/W
1) Derate linearly 0.657 W/ 0 C for T C > 25 0 C

*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 0.2 Adc

V CEO ( sus )

80

Vdc
Collector - Emitter Cutoff Current
V CE = 70 Vdc

I CES

5.0

mAdc
Collector - Emitter Cutoff Current
V CE = 80 Vdc, V BE = 1.5 Vdc

I CEX

5. 0

mAdc
Emitter - Base Cutoff Current
V EB = 7.0 Vdc

I EBO

5.0

mAdc







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