-. —. —-..-...,, ...— “,.. . . .-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET 2N7000P
ISSUE 2- MARCH 94 I
FEATURES
* 60 Volt VcEo
*R 0S(0.) = 5 ‘2
v
D
G s
ABSOLUTE MAXIMUM RATINGS. lJ&h!sJ
PARAMETER SYMBOL VALUE ~
-1 ~
UNIT
Drain-Source Voltage ‘DS 60 ‘– v—
Continuous Drain Current at Tamb=250C ID 200 mA
——+— —
Pulsed Drain Current–- lDM ’500 mA
Gate-Source Voltage ‘GS i 40 v—
Power Dissipation at Tamb=250C Ptot
---–- 2A.
mW——
Operating and Storage Temperature Range Ti:T~tg -55to +150 \ “c
PARAMETER
~~ q+f
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown BVDss 60 v ID=l OIA, VGsOV
Voltage
Gate-Source Threshold Voltage
.—
‘GS(th) _ 0.8 3 v lD=lmA, VD= VGs—- —
Gate-Body Leakage lGSS 10 nA-- - ‘“vG@ 15V, vD~=ov
Zero Gate Voltege Drain Current lD~s 1 UA VD~48V, VG~O
1 mA VDs48V, VG~OV, T=125°C(2)—- ———. — .—— —
On-State Drain Current(1) ID(m) 75 mA
T
VDSIOV, VGF4.5V——-.— —.— .——
Static Drain-Source On-State ‘DS(on) 2.5 V - VGs.=10V,lD.500mA
Voltage (1) 0.4 v
Static Drain-Source On-State RDs& ~ 5 ‘; “- ;;~;;;$;%--–
Resistance (1) 1’
input Capacitance (2)——. .——.——— __, _
AL-P–E.-.;
Common Source Output
1
c 0ss
~ I
25 I pF VD-725V, VGs:OV, f= 1MHz
Capacitance (2)—. —-—
‘Reve;se Transfer Capacitance (2) c,,,
-4
5 pF
— --–— —— ———
TurmOn Time (2)(3) ‘(on) 10 ns \ VDD=15V, lD=500mA
Turn-Off Time (2)(3) Voff) 10 ~ Rg=25Q, RL=25Qns I
) Measured under pulsed conditions. Width=300ps. Duty cycle <2% (2) Sample test.
1)Switching times measured with 50Q source impedance and <5ns rise time on a pulse generator
3-13