 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1 Publication Order Number:
2N7000/D
2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current
– Continuous
– Pulsed
I
D
I
DM
200
500
mAdc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Temperature
Range
T
J
, T
stg
–55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to
Ambient
R
θJA
357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
T
L
300 °C
2N7000
Y = Year
WW = Work Week
YWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO–92
CASE 29
Style 22
N–Channel
S
1
2
3
1
Source
3
Drain
2
Gate
200 mAMPS
60 VOLTS
R
DS(on)
= 5 Ω
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION