TECHNICAL DATA

MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK
SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
Devices Qualified Level
2N6989
2N6989U 2N6990




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS (1)
Ratings Symbol Value Units
C ollector - Emitter Voltage (3) V CEO 50 Vdc
Collector - Base Voltage (3) V CBO 75 Vdc
Emitter - Base Voltage (3) V EBO 6.0 Vdc
Collector Current (3) I C 800 mAdc
Total Power Dissipation @ T A = +25 0 C
2N6989 (2)
2N6989U (2)
2N6990 (2)

P D

1.5
1.0
0.4

W
Operat ing & Storage Junction Temperature Range T op , T stg - 65 to +200 0 C
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/ 0 C above T A = +25 0 C for 2N6989 and 2N6989U
Derate linearly 2.286 mW/ 0 C above T A = +25 0 C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.

TO - 116*
2N6989

20 PIN LEADLESS*
2N6989U

14 PIN FLAT PACK*
2N6990
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 10 mAdc V (BR) CEO 50 Vdc
Collector - Base Cutoff Current
V CB = 60 Vdc
V CB = 75 Vdc; I c = 10 µAdc

I CBO

10
10
ηAdc
µAdc
Emitter - Base Cutof f Current
V EB = 4.0Vdc
V EB = 6.0Vdc; I c = 10 µAdc

I EBO

10
10
ηAdc
µAdc



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