TECHNICAL DATA

MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/558
Devices Qualified Level
2N6987
2N6987U 2N6988




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS (1)
Ratings Symbol Value Units
Collector - Emitter Voltage ( 4) V CEO 60 Vdc
Collector - Base Voltage (4) V CBO 60 Vdc
Emitter - Base Voltage (4) V EBO 5.0 Vdc
Collector Current I C 600 mAdc
Total Power Dissipation @ T A = +25 0 C
2N6987 (2)
2N6987U (2)
2N6988 (3)
P T

1.5
1.0
0.4

W

Operating & Storage Junction Temperature Range T op , T stg - 65 to +200 0 C
1) Maximum voltage between transistors shall be ≥ 500 Vdc
2) Derate linearly 8.57 mW/ 0 C above T A = +25 0 C
3) Derate linearly 2.286 mW/ 0 C above T A = +25 0 C.
4) Ratings apply to each transistor in the array.

2N6987*
TO - 116

2N6987U*
20 PIN LEADLESS

2N6988*
14 PIN FLAT PACK
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 10 mAdc V (BR)CEO 60 Vdc
Collector - Base Cutoff Current
V CB = 60 Vdc
V CB = 50 Vdc

I CBO



10
10

µAdc
ηAdc
Emitter - Base Cutoff Current
V BE = 5.0 Vd c
V EB = 3.5 Vdc

I EBO

10
50

µAdc
ηAdc





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