1
Motorola Thyristor Device Data
C0083C0105C0108C0105C0099C0111C0110 C0067C0111C0110C0116C0114C0111C0108C0108C0101C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
Reverse Blocking Triode Thyristors
. . . PNPN devices designed for high volume consumer applications such as
temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
• Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Recommended Electrical Replacement for C106
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Repetitive Peak Forward and Reverse Blocking Voltage
(1)
(1/2 Sine Wave)
(R
GK
= 1000 ohms, T
C
= –40 to +110°C)
V
DRM
or
V
RRM
400
Volts
*Non–repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, R
GK
= 1000 ohms,
T
C
= –40° to +110°C)
V
RSM
450
Volts
*Average On–State Current
(T
C
= –40 to + 90°C)
(T
C
= +100°C)
I
T(AV)
2.6
1.6
Amps
*Surge On–State Current
(1/2 Sine Wave, 60 Hz, T
C
= +90°C)
(1/2 Sine Wave, 1.5 ms, T
C
= +90°C)
I
TSM
25
35
Amps
Circuit Fusing
(t = 8.3 ms)
I
2
t 2.6 A
2
s
*Peak Gate Power
(Pulse Width = 10 µs, T
C
= 90°C)
P
GM
0.5 Watts
*Indicates JEDEC Registered Data. (continued)
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by 2N6240/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
 Motorola, Inc. 1999
C0050C0078C0054C0050C0052C0048
CASE 77-08
(TO-225AA)
STYLE 2
SCRs
4 AMPERES RMS
400 VOLTS
K
A
G
A
K
A
G