JFET VHF/UHF Amplifiers
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
DG
25 Vdc
Reverse Gate–Source Voltage V
GSR
25 Vdc
Drain Current I
D
30 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= –1.0 µAdc, V
DS
= 0)
V
(BR)GSS
–25 — — Vdc
Gate Reverse Current
(V
GS
= –20 Vdc, V
DS
= 0)
(V
GS
= –20 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
—
—
—
—
–1.0
–0.2
nAdc
µAdc
Gate Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
V
GS(off)
–2.0 — –6.0
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
I
DSS
8.0 — 20 mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
y
fs

4000 — 8000
mhos
Input Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(y
is
)
— — 1000
mhos
Output Admittance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1.0 kHz)
y
os

— — 75
mhos
Output Conductance
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(y
os
)
— — 100
mhos
Forward Transconductance
(V
DS
= 15 Vdc, V
GS
= 0, f = 400 MHz)
Re(y
fs
)
3500 — —
mhos
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1 Publication Order Number:
2N5486/D
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
1
2
3
2N5486
1 DRAIN
2 SOURCE
3
GATE