JFET Amplifiers
P–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
DG
40 Vdc
Reverse Gate–Source Voltage V
GSR
40 Vdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Junction Temperature Range T
J
–65 to +135 °C
Storage Channel Temperature Range T
stg
–65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 10 µAdc, V
DS
= 0) 2N5460, 2N5461, 2N5462
V
(BR)GSS
40 — — Vdc
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0) 2N5460, 2N5461, 2N5462
(V
GS
= 30 Vdc, V
DS
= 0)
(V
GS
= 20 Vdc, V
DS
= 0, T
A
= 100°C) 2N5460, 2N5461, 2N5462
(V
GS
= 30 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
—
—
—
—
5.0
1.0
nAdc
µAdc
Gate–Source Cutoff Voltage 2N5460
(V
DS
= 15 Vdc, I
D
= 1.0 µAdc) 2N5461
2N5462
V
GS(off)
0.75
1.0
1.8
—
—
—
6.0
7.5
9.0
Vdc
Gate–Source Voltage
(V
DS
= 15 Vdc, I
D
= 0.1 mAdc) 2N5460
(V
DS
= 15 Vdc, I
D
= 0.2 mAdc) 2N5461
(V
DS
= 15 Vdc, I
D
= 0.4 mAdc) 2N5462
V
GS
0.5
0.8
1.5
—
—
—
4.0
4.5
6.0
Vdc
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1 Publication Order Number:
2N5460/D
2N5460
2N5461
2N5462
CASE 29–11, STYLE 7
TO–92 (TO–226AA)
1
2
3
2 DRAIN
1 SOURCE
3
GATE