Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
50 Vdc
Collector–Base Voltage V
CBO
50 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
50 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
50 — Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 µAdc, I
E
= 0)
V
(BR)CBO
50 — Vdc
Collector Cutoff Current
(V
CB
= 35 Vdc, I
E
= 0)
I
CBO
— 50 nAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
— 50 nAdc
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
November, 2001 – Rev. 1
1 Publication Order Number:
2N5087/D
2N5087
ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER