 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 0
1 Publication Order Number:
2N3906/D
2N3906
Preferred Device
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current – Continuous I
C
200 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation
@ T
A
= 60°C
P
D
250 mW
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to
+150
°C
THERMAL CHARACTERISTICS (Note 1.)
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
R
θJA
200 °C/W
Thermal Resistance,
Junction to Case
R
θJC
83.3 °C/W
1. Indicates Data in addition to JEDEC Requirements.
Device Package Shipping
ORDERING INFORMATION
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
2
BASE
1
EMITTER
2N3906 TO–92 5000 Units/Box
2N3906RLRA TO–92 2000/Tape & Reel
2N3906RLRE TO–92 2000/Tape & Reel
2N3906RLRM TO–92 2000/Ammo Pack
STYLE 1
2N3906RLRP TO–92 2000/Ammo Pack
TO–92
CASE 29
STYLE 1
3
2
1
Y = Year
WW = Work Week
MARKING DIAGRAMS
2N
3906
YWW
2N3906RL1 TO–92 2000/Tape & Reel
2N3906ZL1 TO–92 2000/Ammo Pack