2N3819
器件描述：JFET VHF/UHF Amplifier N-Channel-Depletion
器件厂商：ONSEMI [ON Semiconductor]
文件大小：176.83KB，共8页
Sponsor by e络盟器件资料摘要：
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 0
1 Publication Order Number:
2N3819/D
2N3819
JFET VHF/UHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
25 Vdc
Drain–Gate Voltage V
DG
25 Vdc
Gate–Source Voltage V
GS
25 Vdc
Drain Current I
D
100 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Storage Channel Temperature Range T
stg
–65 to +150 °C
Device Package Shipping
ORDERING INFORMATION
2N3819 TO–92
TO–92
CASE 29
STYLE 22
5000 Units/Box
3
2
1
2N3819 = Device Code
Y = Year
WW = Work Week
MARKING DIAGRAM
2N
3819
YWW
http://onsemi.com
3 DRAIN
1 SOURCE
2
GATE
March, 2002 – Rev. 0
1 Publication Order Number:
2N3819/D
2N3819
JFET VHF/UHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
25 Vdc
Drain–Gate Voltage V
DG
25 Vdc
Gate–Source Voltage V
GS
25 Vdc
Drain Current I
D
100 mAdc
Forward Gate Current I
G(f)
10 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Storage Channel Temperature Range T
stg
–65 to +150 °C
Device Package Shipping
ORDERING INFORMATION
2N3819 TO–92
TO–92
CASE 29
STYLE 22
5000 Units/Box
3
2
1
2N3819 = Device Code
Y = Year
WW = Work Week
MARKING DIAGRAM
2N
3819
YWW
http://onsemi.com
3 DRAIN
1 SOURCE
2
GATE