TECHNICAL DATA

NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393
Devices Qualified Level
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S




JAN
JANTX
JANTXV

MAXIMUM RATINGS

Ratings

Symbol
2N3418, S
2N3420, S
2N3419, S
2N3421, S

Unit
Collector - Emitter Voltage V CEO 60 80 Vdc
Collector - Base Voltage V CBO 85 125 Vdc
Emitter - Base Voltage V EBO 8.0 Vdc
Collector Current
t P ≤ 1.0 ms, duty cycle ≤ 50% I C
3.0
5.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +100 0 C (2) P T
1.0
15
W
W/ 0 C
Operating & Storage Temperature Range T op , T stg - 65 to +200 0 C
1) Derate linearly 5.72 mW/ 0 C for T A > 25 0 C
2) Derate linearly 150 mW/ 0 C for T C > 100 0 C

TO - 5*
2N3418, 2N3419,
2N3420, 2 N3421

TO - 39* (TO205 - AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Current
I C = 50 mAdc, I B = 0 2N3418 , S; 2N3420, S
2N3419, S; 2N3421, S
V (BR) CEO 60
80
Vdc
Collector - Emitter Cutoff Current
V BE = - 0.5 Vdc, V CE = 80 V dc 2N3418, S; 2N3420, S
V BE = - 0.5 Vdc, V CE = 120 V dc 2N3419, S; 2N3421, S
I CEX
0.3 0.3
µAdc

Collector - Emitter Cutoff Current
V CE = 45 Vdc, I B = 0 2N3418, S; 2N3420, S
V CE = 60 Vdc, I B = 0 2N3419, S; 2N3421, S
I CEO

5.0
5.0
µAdc

Emitter - Base Cutoff Current
V EB = 6.0 Vdc, I C = 0
V EB = 8.0 Vdc, I C = 0
I EBO

0.5
10
µAdc



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