BUK9006-55A
TrenchMOS™ logic level FET
Rev. 01 — 1 August 2003 Preliminary data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor available as a bare die
using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
Product availability:
BUK9006-55A distributed as individual die on reel.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
a73 25 A testing of individual die a73 Life-tested to Q101 at 175 °C
a73 Inductive energy testing of individual
die
a73 Automatic visual inspection.
a73 Automotive systems a73 12 V and 24 V loads
a73 Motors, lamps and solenoids a73 General purpose power switching.
a73 E
DS(AL)S
≤ 1.1 J a73 R
DSon(die)
=5mΩ (typ)
a73 V
(BR)DSS
≤ 55 V a73 V
GS(th)
= 1.5 V (typ)
a73 Die size = 4.30 × 4.30 mm (typ) a73 Die thickness = 240 µm (typ).
Table 1: Pinning - Bare die simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate
2 source
- drain; connected to
underside of die
12
03nn81
s
d
g
MBB076