Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 360 415 °C/W
n-ch 400 460 °C/W
R
θJL
n-ch 300 350 °C/W
p-ch 360 415 °C/W
p-ch 400 460 °C/W
R
θJL
p-ch 300 350 °C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
20 -20
±8
Drain-Source Voltage
±8Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
0.9
0.7
5
0.3
0.19
-0.48
-0.6
0.3
0.19
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-3
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AO7600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 20V -20V
I
D
= 0.9A (V
GS
=4.5V) -0.6A (V
GS
=-4.5V)

R
DS(ON)
R
DS(ON)
< 300mΩ (V
GS
=4.5V) < 550mΩ (V
GS
=-4.5V)
< 350mΩ (V
GS
=2.5V) < 700mΩ (V
GS
=-2.5V)
< 450mΩ (V
GS
=1.8V) < 950mΩ (V
GS
=-1.8V)
General Description
The AO7600 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch, an
inverter, and for a host of other
applications. Both devices are ESD
protected. Standard Product AO7600 is
Pb-free (meets ROHS & Sony 259
specifications). AO7600L is a Green
Product ordering option. AO7600 and
AO7600L are electrically identical.
n-channel p-channel
SC-70-6
(SOT-323)
Top View
S2D2
G2
D1
G1
S1
D1
S1
G
D2
S2
G
Alpha & Omega Semiconductor, Ltd.