Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
16.7 25
40 50
R
θJL
1.9 2.5Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
V
V±8Gate-Source Voltage
Drain-Source Voltage 20
A
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
T
C
=100°C 10
Pulsed Drain Current
C
30
Continuous Drain
Current
G
T
C
=25°C
I
D
10
Avalanche Current
C
15 A
Repetitive avalanche energy L=0.1mH
C
26 mJ
W
T
A
=70°C 1.6
Power Dissipation
B
T
C
=25°C
P
D
50
Junction and Storage Temperature Range -55 to 150 °C
W
T
C
=100°C 20
Power Dissipation
A
T
A
=25°C
P
DSM
2.5
AOD422, AOD422L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 2: Sep 2004
Features
V
DS
(V) = 20V
I
D
= 10 A
R
DS(ON)
< 22mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
R
DS(ON)
< 34mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AOD422 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AOD422L (Green
Product) is offered in a Lead Free package.
D
S
G
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.