SCHOTTKY RECTIFIER
30A, 100V
22GQ100
Major Ratings and Characteristics Description/Features
02/22/02
CASE STYLE
www.irf.com 1
Characteristics 22GQ100 Units
II
F(AV)
Rectangular 30 A
waveform
V
RRM
100 V
I
FSM
@ tp = 8.3ms half-sine 400 A
V
F
@ 30Apk, T
J
=125°C 0.90 V
T
J
, T
stg
Operating and storage -55 to 150 °C
1 2 3
HIGH EFFICIENCY SERIES
IR Case Style TO-254AA
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014] B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
123
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
NOT ES :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. AL L DIME NS IONS ARE S H OWN IN MIL L IME T E RS [INCHE S ].
3. CONT ROL LING DIMENS ION: INCH.
4. CONF ORMS TO JEDE C OUTLINE T O-254AA.
PD -20353D
(ISOLATED BASE)
CATHODE ANODE
The 22GQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source controlled drawings to TX,
TXV and S levels.
Hermetically Sealed
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long
Term Reliability
Schottky Diodes Connected in Series
Electrically Isolated