Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage V
DS
30 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain
Current
A
T
A
=25°C
I
D
18
AT
A
=70°C 15
Pulsed Drain Current
B
I
DM
80
Power Dissipation
T
A
=25°C
P
D
3
W
T
A
=70°C 2.1
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
31 40 °C/W
Maximum Junction-to-Ambient
A
Steady-State
59 75 °C/W
Maximum Junction-to-Lead
C
Steady-State R
θJL
16 24 °C/W
AO4430, AO4430L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
Rev 1: June 2004
Features
V
DS
(V) = 30V
I
D
= 18A
R
DS(ON)
< 5.5mΩ (V
GS
= 10V)
R
DS(ON)
< 7.5mΩ (V
GS
= 4.5V)
General Description
The AO4430 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity,
body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a
low side switch in Notebook CPU core power
conversion. AO4430L (Green Product) is offered in a
lead free package.
SOIC-8
G
S
S
S
D
D
D
D
G
D
S
Alpha & Omega Semiconductor, Ltd.