ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM
= 2800 V
I
TAVM
= 3740 A
I
TRMS
= 5880 A
I
TSM
= 60000 A
V
T0
=0.95V
r
T
= 0.100 mΩ
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-03 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Part Number 5STP 33L2800 5STP 33L2600 5STP 33L2200 Conditions
V
DRM
V
RRM
2800 V 2600 V 2200 V f = 50 Hz, t
p
= 10ms
V
RSM1
3000 V 2800 V 2400 V t
p
= 5ms, single pulse
I
DRM ≤ 400 mA
V
DRM
I
RRM ≤ 400 mA
V
RRM
T
j
= 125°C
dV/dt
crit
1000 V/µs Exp. to 0.67 x V
DRM
, T
j
= 125°C
Mechanical data
F
M
Mounting force nom. 70 kN
min. 63 kN
max. 84 kN
a
Acceleration
Device unclamped
Device clamped
50
100
m/s
2
m/s
2
mWeight 1.45kg
D
S
Surface creepage distance 36 mm
D
a
Air strike distance 15 mm