AQZ404
器件资料摘要：
613
POWER PhotoMOS RELAYS
1-channel (Form B) Type
mm inch
3.5– 0.2
.138– .008
12.5– 0.2
.492– .008
21– 0.2
.827– .008
FEATURES
1. High capacity
A maximum 0.5A load can be controlled
with a 5 mA input current. The ON resis-
tance is low at 2.8
W
(typ.)
2. 1 Form B
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
,
#01
#02
#02
#03#04
#04
#06#07
#01#03#04#06#02
#08
#02
,,#01 #03
#05#07#08
Source electrode
N–
N+
N+ N+
P+
N+ N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
3. Compact slim-type 4-pin SIL
(W)3.5
·
(D)21.0
·
(H)12.5 mm
(W).138
·
(D).827
·
(H).492 inch
·
The compact size of the 4-pin SIL pack-
age allows high density mounting.
TYPICAL APPLICATIONS
• Railroad, traffic signals
• Measurement instruments
• Testing equipment
TYPES
AC/DC type
RATING
1) Absolute maximum ratings (Ambient temperature: 25
C 77
F)
Output rating*
Part No.
Packing quantity
Load voltage Load current Inner carton Outer carton
400 V 0.5 A AQZ404 25 pcs 500 pcs
Item Symbol AQZ104 Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (Peak AC) V
L
400 V
Continuous load current (Peak AC) I
L
0.5 A
Peak load current I
peak
1.5 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
1.6 W
Total power dissipation P
T
1.6 W
I/O isolation voltage V
iso
2,500 V AC
Temperature limits
Operating T
opr
–40
C to +85
C –40
F to +185
F Non-condensing at low temperatures
Storage T
stg
–40
C to +100
C –40
F to +212
F
PhotoMOS
RELAYS
POWER PhotoMOS RELAYS
1-channel (Form B) Type
mm inch
3.5– 0.2
.138– .008
12.5– 0.2
.492– .008
21– 0.2
.827– .008
FEATURES
1. High capacity
A maximum 0.5A load can be controlled
with a 5 mA input current. The ON resis-
tance is low at 2.8
W
(typ.)
2. 1 Form B
This has been realized thanks to the built-
in MOSFET processed by our proprietary
method, DSD (Double-diffused and Se-
lective Doping) method.
,
#01
#02
#02
#03#04
#04
#06#07
#01#03#04#06#02
#08
#02
,,#01 #03
#05#07#08
Source electrode
N–
N+
N+ N+
P+
N+ N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
3. Compact slim-type 4-pin SIL
(W)3.5
·
(D)21.0
·
(H)12.5 mm
(W).138
·
(D).827
·
(H).492 inch
·
The compact size of the 4-pin SIL pack-
age allows high density mounting.
TYPICAL APPLICATIONS
• Railroad, traffic signals
• Measurement instruments
• Testing equipment
TYPES
AC/DC type
RATING
1) Absolute maximum ratings (Ambient temperature: 25
C 77
F)
Output rating*
Part No.
Packing quantity
Load voltage Load current Inner carton Outer carton
400 V 0.5 A AQZ404 25 pcs 500 pcs
Item Symbol AQZ104 Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
3 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (Peak AC) V
L
400 V
Continuous load current (Peak AC) I
L
0.5 A
Peak load current I
peak
1.5 A 100 ms (1 shot), V
L
= DC
Power dissipation P
out
1.6 W
Total power dissipation P
T
1.6 W
I/O isolation voltage V
iso
2,500 V AC
Temperature limits
Operating T
opr
–40
C to +85
C –40
F to +185
F Non-condensing at low temperatures
Storage T
stg
–40
C to +100
C –40
F to +212
F
PhotoMOS
RELAYS