Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
20 30
46 60
R
θJL
5.3 7
25
W
T
C
=100°C 12.5
A
Repetitive avalanche energy L=0.1mH
C
10 mJ
W
Junction and Storage Temperature Range
A
P
DSM
°C
2.1
1.33
-55 to 175
T
A
=70°C
I
D
Continuous Drain
Current
G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
30
Maximum Junction-to-Ambient
A
Steady-State
8
6
20
Avalanche Current
C
8
Power Dissipation
B
T
C
=25°C
P
D
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
°C/W
AOD410, AOD410L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev3: Nov 2004
Features
V
DS
(V) = 30V
I
D
= 8A
R
DS(ON)
< 65mΩ (V
GS
= 10V)
R
DS(ON)
< 105mΩ (V
GS
= 4.5V)
General Description
The AOD410 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AOD410L( Green Product ) is offered in
a lead-free package.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.