Semiconductor Group 1 May-06-1999
BUP 311D
IGBT With Antiparallel Diode
Preliminary data sheet
• Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Including fast free-wheel diode
Former Development ID: BUP 3JKD
Pin 1 Pin 2 Pin 3
G C E
Type V
CE
I
C
Package Ordering Code
BUP 311D 1200V A TO-218 AB ON REQUEST
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE
1200 V
Collector-gate voltage
R
GE
= 20 kΩ
V
CGR
1200
Gate-emitter voltage V
GE
± 20
DC collector current
T
C
= 25 °C
T
C
= 100 °C
I
C
12
20
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
I
Cpuls
40
Diode forward current
T
C
= 100 °C
I
F
tbd
Pulsed diode current, t
p
= 1 ms
T
C
= 25 °C
I
Fpuls
tbd
Power dissipation
T
C
= 25 °C
P
tot
125
W
Chip or operating temperature T
j
-55 ... + 150 °C
Storage temperature T
stg
-55 ... + 150
Infineon
C67078-A4102