BFR193TF
Document Number 85103
Rev. 1.3, 28-Apr-05
Vishay Semiconductors
www.vishay.com
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2
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3
Electrostatic sensitive device.
Observe precautions for handling.
16867
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
• Low noise figure
High transition frequency f
T
= 8 GHz
Excellent large-signal behaviour
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For low noise and high gain applications such as
power amplifiers up to 2 GHz and for linear broad-
band amplifiers.
Mechanical Data
Typ: BFR193TF
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Part Marking Package
BFR193TF RC SOT-490
Parameter Test condition Symbol Value Unit
Collector-base voltage V
CBO
20 V
Collector-emitter voltage V
CEO
12 V
Emitter-base voltage V
EBO
2V
Collector current I
C
80 mA
Total power dissipation T
amb
≤ 45 °C P
tot
420 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
-65 to +150 °C
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