BF543
Document Number 85072
Rev. 1.5, 05-Jul-05
Vishay Semiconductors
www.vishay.com
1
19240
32
1
Electrostatic sensitive device.
Observe precautions for handling.
G
D
S
N-Channel MOS-Fieldeffect Triode, Depletion Mode
Features
• Integrated gate protection diode
Low feedback capacitance
Low noise figure
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
High frequency stages up to 300 MHz.
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Gate, 3 = Drain
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Maximum Thermal Resistance
1)
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35µm Cu
Part Marking Package
BF543 LD SOT-23
Parameter Test condition Symbol Value Unit
Drain - source voltage V
DS
20 V
Drain current I
D
30 mA
Gate - source peak current ±I
GSM
10 mA
Total power dissipation T
amb
≤ 60 °C P
tot
200 mW
Channel temperature T
Ch
150 °C
Storage temperature range T
stg
-55 to +150 °C
Parameter Test condition Symbol Value Unit
Channel ambient
1)
R
thChA
450 K/W
e3