1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
a73 High power gain
a73 Low noise figure
a73 High transition frequency
a73 Gold metallization ensures excellent reliability
1.3 Applications
a73 Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
a78 analog and digital cellular telephones
a78 cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
a78 radar detectors
a78 pagers
a78 Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005 Product data sheet
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 15 V
V
CEO
collector-emitter voltage open base - - 6 V
I
C
collector current (DC) - - 10 mA
P
tot
total power dissipation T
sp
≤ 145 °C
[1]
--60mW
h
FE
DC current gain I
C
= 5 mA; V
CE
=3V;
T
j
=25°C
60 100 200
C
CBS
collector-base
capacitance
V
CB
= 5 V; f = 1 MHz;
emitter grounded
- 0.17 0.3 pF
f
T
transition frequency I
C
= 5 mA; V
CE
=3V;
f = 1 GHz; T
amb
=25°C
- 14 - GHz