AP1045A
1of 6
2.4~2.5 GHz High Power Amplifier
2004.12.20
AP1045A
For more information,please contact us at:
Sales Dept.
Tel: +886-2-2698-1022
e-mail: sales@rfintc.com
© 2003 RF Integrated Corporation. All rights reserved.
RF integrated Corp. reserved the right to make any changes to the specifications without notice.
AP1045A is a linear, two-stages power amplifier
MMIC with high output power in 2.4GHz band utilizing
InGaP/GaAs HBT process. With the excellent linearity
performance, the device delivers 20dBm output
power under 54Mbps OFDM (IEEE802.11g)
modulation, with 3% EVM at 3.3V. It can also deliver
22.5dBm 11g linear power at 5V. The PA also
includes on-chip power detector, providing a DC
voltage proportional to the output power of device.
The AP1045A is housed in a 3 x 3(mm), 16 pin, QFN
leadless package.
Major Applications
• IEEE 802.11b/g
• Wireless LAN Systems
• 2.4 GHz ISM Band Application
• Suitable for high power WLAN applications
Pin Details
Functional Block Diagram
GroundGNDPkg Base
No contactNC16
No contactNC15
Power supply inputVcc14
Power supply inputVcc13
RF outputRF_OUT12
RF outputRF_OUT11
RF outputRF_OUT10
No contactNC9
No contactNC8
GroundGND7
Second stage BiasVb26
First stage BiasVb15
Detector OutputDect_Out4
Bias Ckt Voltage Bias_Vcc3
GroundGND2
RF inputRF_IN1
DescriptionNamePin Number
QFN-16pin, 3x3 (mm)
• High Power:
20dBm 11g linear power at 3.3V
22.5dBm 11g linear power at 5V
• High Gain:
30.5dB Gain at 3.3V, Pout=20dBm
• Detector
1
2
3
4
5678
9
10
11
12
16
15 14 13
Bias
RF_IN
GND
Bias_Vcc
Dect_Out
Vb1 Vb2 GND NC
NC
RF_OUT
RF_OUT
RF_OUT
VccVccNCNC