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1998©
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
DATA SHEET
2002
FEATURES
• The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
VCEO ≥ −60 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3.0 A
Mold package that does not require an insulating board or
insulation bushing
Complementary transistor with 2SD1585
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −60 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −3.0 A
Collector current (pulse) IC(pulse)* −5.0 A
Base current (DC) IB(DC) −0.6 A
Total power dissipation PT (Tc = 25°C) 15 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter