B06N60
N-Channel Power MOSFET


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• Advanced Process Technology
• Ultra low On-Resistance Provides Higher Efficiency
• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS (on) Specified at Elevated Temperature

DESCRIPTION
This high voltage MOSFET used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and
commutation time. Designed for high voltage, high speed switching application in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operation areas
critical and offer additional and safety margin against unexpected voltage transients.






ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Drain to Current – Continuous

ID

6.0

A
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/- 20
+/- 40
V
V
Total Power Dissipation
Derate Above 25℃
PD 125
1.0
W
W/℃
Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃
Single Pulse Drain-to-Source Avalanche Energy – TJ = 25 ℃
(VDD = 100V, VGS= 10V, IL =6A, L = 10mH, RG=25Ω)
EAS 180 mJ
Thermal Resistance – Junction to Case
- Junction to Ambient
ΘJC
ΘJA

1.0
62.5
℃/W
Maximum Led Temperature for Solding Purpose, 1/8” from case for 10 seconds TL 260 ℃






D



G


S
S

VDSS = 600V

RDS (on) = 1.2 Ω

ID = 6.0 A
TO-220