Power MOSFETs
1
Publication date: March 2004 SJG00037AED
2SK3494
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Q
g
• High avalanche resistance
■ Applications
• For PDP
• For high-speed switching
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Drain-source surrender voltage V
DSS
250 V
Gate-source surrender voltage V
GSS
±30 V
Drain current I
D
20 A
Peak drain current I
DP
80 A
Avalanche energy capability
*
EAS 657 mJ
Power dissipation P
D
50 W
T
a
= 25°C 1.4
Channel temperature T
ch
150 °C
Storage temperature T
stg
−55 to +150 °C
0 to 0.5
123
(8.9)
(10.2)
0 to 0.3
(2.1)
(
6.4)
(1.4)
10.5±0.3
4.6±0.2
1.4±0.1
0.8±0.1
2.5±0.2
1.4±0.1
2.54±0.3
10.1
±
0.3
3.0
±
0.5
(1.4)
1.5
±
0.3
0.6
±
0.1
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Note)
*
: L = 2.79 mH, I
L
= 20 A, V
DD
= 50 V, 1 pulse, T
a
= 25°C
Marking Symbol: K3494
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
DSS
I
D
= 1 mA, V
GS
= 0 250 V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.0 4.0 V
Drain-source cutoff current I
DSS
V
DS
= 200 V, V
GS
= 010µA
Gate-source cutoff current I
GSS
V
GS
= ±30 V, V
DS
= 0 ±1 µA
Drain-source ON resistance R
DS(on)
V
GS
= 10 V, I
D
= 10 A 82 105 mΩ
Forward transfer admittance Y
fs
 V
DS
= 10 V, I
D
= 10 A 7 14 S
Short-circuit forward transfer capacitance C
iss
V
DS
= 25 V, V
GS
= 0, f = 1 MHz 2 450 pF
(Common-source)
Short-circuit output capacitance C
oss
356 pF
(Common-source)
Reverse transfer capacitance C
rss
40 pF
(Common-source)
Turn-on delay time t
d(on)
V
DD
≈ 100 V, I
D
= 10 A 36 ns
Rise time T
r
R
L
= 10 Ω, V
GS
= 10 V 20 ns
Turn-off delay time t
d(off)
184 ns
Fall time t
f
29 ns