The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©

2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK1109
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D15940EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK1109 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
1000 µS TYP. (IDSS = 100 µA)
1600 µS TYP. (IDSS = 200 µA)
• Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK1109 SC-59 (MM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note
VDSX 20 V
Gate to Drain Voltage VGDO –20 V
Drain Current ID 10 mA
Gate Current IG 10 mA
Total Power Dissipation PT 80 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg –55 to +125 °C
Note VGS = –1.0 V
Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
12
3
5.5 ± 0.4
1.8 MIN.
1.8 MIN.
1.5
1.1
0.8
2.9 ± 0.2
1. Source
2. Drain
3. Gate
EQUIVALENT CIRCUIT
Source
Gate
Drain