050-7425 Rev B 10-2003
APT80GP60B2
600V
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss • 200 kHz operation @ 400V, 45A
• Low Gate Charge • 100 kHz operation @ 400V, 72A
• Ultrafast Tail Current shutoff • SSOA rated
POWER MOS 7
®
IGBT
MIN TYP MAX
600
3 4.5 6
2.2 2.7
2.1
1.0
5
±100
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
mA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT80GP60B2
600
±20
±30
100
100
330
330A @ 600V
1041
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25°C
Continuous Collector Current
7
@ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
T-Max
TM
G
C
E
G
C
E