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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SB1731

器件描述:Low frequency amplifier
器件厂商:ROHM [Rohm]
厂商主页:http://www.rohm.com/
文件大小:74.67KB,共3页
Sponsor by e络盟
器件资料摘要:
2SB1731
Transistors
1/2
Low frequency amplifier
2SB1731


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) VCE(sat) ≤−370mV
at IC =−1A / IB =−50mA




zExternal dimensions (Unit : mm)
(1)Base
(2)Emitter
(3)Collector
0.3
0.770.17
0.15Max.
2.01.3
0.65
0.65
(3)
(
1
)
(
2
)
1.7 0.20.2
2.1
0~0.1
0.85Max.
ROHM : TUMT3 Abbreviated symbol : FL



zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−30
−30
−6
−1.5
400
150
−55 to +150
−3

Unit
V
V
V
A
A
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, PW=1ms


zPackaging specifications
2SB1731
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping







zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB=−10V, IE=0A, f=1MHz
fT − 280 − MHz VCE=−2V, IE=100mA, f=100MHz
BVCBO −30 −−V IC=−10µA
BVCEO −30 −−V IC=−1mA
BVEBO −6 −−V IE=−10µA
ICBO −−−100 nA VCB=−30V
IEBO −−−100 nA VEB=−6V
VCE(sat) −−200 −370 mV IC=−1A, IB=−50mA
hFE 270 − 680 − VCE=−2V, IC=−100mA
Cob − 13 − pF


Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed