03P4MG
器件资料摘要：
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DATA SHEET
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
The mark a35 shows major revised points.
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50 µA)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit Remarks
03P4MG 03P6MG
Non-repetitive Peak Reverse Voltage VRSM 700 700 V RGK = 1 kΩ
Non-repetitive Peak Off-state Voltage VDSM 700 700 V RGK = 1 kΩ
Repetitive Peak Reverse Voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive Peak Off-state Voltage VDRM 400 600 V RGK = 1 kΩ
Average On-state Current IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°) mA Refer to Figure 10.
Effective On-state Current IT(RMS) 470 mA −
Surge On-state Current ITSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
Fusing Current ∫ iT
2
dt 0.15 (1 ms ≤ t ≤ 10 ms) A
2
s −
Critical Rate of On-state Current of Rise dIT/dt 20 A/µs −
Peak Gate Power Dissipation PGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mW Refer to Figure 3.
Average Gate Power Dissipation PG(AV) 10 mW Refer to Figure 3.
Peak Gate Forward Current IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mA −
Peak Gate Reverse Voltage VRGM 6 V −
Junction Temperature Tj −40 to +125 °C −
Storage Temperature Tstg −55 to +150 °C −
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77 MAX.
4.2 MAX.
13
1.5
12.7 MIN.
5.5 MAX.
5.2 MAX.φ
0.5
2
Electrode connection
1: Gate
2: Anode
3: Cathode
*TC test bench-mark
Standard weight: 0.3 g
a35
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DATA SHEET
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
The mark a35 shows major revised points.
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50 µA)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit Remarks
03P4MG 03P6MG
Non-repetitive Peak Reverse Voltage VRSM 700 700 V RGK = 1 kΩ
Non-repetitive Peak Off-state Voltage VDSM 700 700 V RGK = 1 kΩ
Repetitive Peak Reverse Voltage VRRM 400 600 V RGK = 1 kΩ
Repetitive Peak Off-state Voltage VDRM 400 600 V RGK = 1 kΩ
Average On-state Current IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°) mA Refer to Figure 10.
Effective On-state Current IT(RMS) 470 mA −
Surge On-state Current ITSM 8 (f = 50 Hz, Sine half-wave, 1 cycle) A Refer to Figure 2.
Fusing Current ∫ iT
2
dt 0.15 (1 ms ≤ t ≤ 10 ms) A
2
s −
Critical Rate of On-state Current of Rise dIT/dt 20 A/µs −
Peak Gate Power Dissipation PGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mW Refer to Figure 3.
Average Gate Power Dissipation PG(AV) 10 mW Refer to Figure 3.
Peak Gate Forward Current IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%) mA −
Peak Gate Reverse Voltage VRGM 6 V −
Junction Temperature Tj −40 to +125 °C −
Storage Temperature Tstg −55 to +150 °C −
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77 MAX.
4.2 MAX.
13
1.5
12.7 MIN.
5.5 MAX.
5.2 MAX.φ
0.5
2
Electrode connection
1: Gate
2: Anode
3: Cathode
*TC test bench-mark
Standard weight: 0.3 g
a35