3N190
器件描述：P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
器件厂商：LINEAR [Linear Integrated Systems]
文件大小：274.11KB，共2页
Sponsor by e络盟器件资料摘要：
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT I
GSS
≤ ±10pA
LOW TRANSFER CAPACITANCE C
rss
≤ 1.0pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation One Side 300mW
Continuous Power Dissipation Both Sides 525mW
Maximum Current
Drain to Source
2
50mA
Maximum Voltages
Drain to Gate
2
30V
Drain to Source
2
30V
Transient Gate to Source
2,3
±125V
Gate to Gate ±80V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
BS
= 0V unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
fs2fs1 gg Forward Transconductance Ratio 0.85 1.0 V
DS
= -15V, I
D
= -500µA, f = 1kHz
V
GS1-2
Gate to Source Threshold Voltage
Differential
100 mV V
DS
= -15V, I
D
= -500µA
∆T
∆V 2GS1 −
Gate to Source Threshold Voltage
Differential with Temperature
4
100
V
DS
= -15V, I
D
= -500µA
T
S
= -55 TO +25 °C
∆T
∆V 2GS1 −
Gate to Source Threshold Voltage
Differential with Temperature
4
100
CµV °
V
DS
= -15V, I
D
= -500µA
T
S
= +25 TO +125 °C
G1
D1
G2
D2
5
BOTTOM VIEW
TO-78
1
2
3
4
6
7
S1
C
S2
Linear Integrated Systems
3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage -40 I
D
= -10µA
BV
SDS
Source to Drain Breakdown Voltage -40 I
S
= -10µA, V
BD
= 0V
V
GS
Gate to Source Voltage -3.0 -6.5 V
DS
= -15V, I
D
= -500µA
-2.0 -5.0 V
DS
= V
GS
, I
D
= -10µA
V
GS(th)
Gate to Source Threshold Voltage
-2.0 -5.0
V
V
DS
= -15V, I
D
= -500µA
I
GSSR
Reverse Gate Leakage Current 10 V
GS
= 40V
I
GSSF
Forward Gate Leakage Current -10 V
GS
= -40V
I
DSS
Drain Leakage Current "Off" -200 V
DS
= -15V
I
SDS
Source to Drain Leakage Current "Off" -400
pA
V
SD
= -15V, V
DB
= 0V
I
D(on)
Drain Current "On" -5.0 -30.0 mA V
DS
= -15V, V
GS
= -10V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT I
GSS
≤ ±10pA
LOW TRANSFER CAPACITANCE C
rss
≤ 1.0pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -65 to +150 °C
Operating Junction Temperature -55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation One Side 300mW
Continuous Power Dissipation Both Sides 525mW
Maximum Current
Drain to Source
2
50mA
Maximum Voltages
Drain to Gate
2
30V
Drain to Source
2
30V
Transient Gate to Source
2,3
±125V
Gate to Gate ±80V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
BS
= 0V unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
fs2fs1 gg Forward Transconductance Ratio 0.85 1.0 V
DS
= -15V, I
D
= -500µA, f = 1kHz
V
GS1-2
Gate to Source Threshold Voltage
Differential
100 mV V
DS
= -15V, I
D
= -500µA
∆T
∆V 2GS1 −
Gate to Source Threshold Voltage
Differential with Temperature
4
100
V
DS
= -15V, I
D
= -500µA
T
S
= -55 TO +25 °C
∆T
∆V 2GS1 −
Gate to Source Threshold Voltage
Differential with Temperature
4
100
CµV °
V
DS
= -15V, I
D
= -500µA
T
S
= +25 TO +125 °C
G1
D1
G2
D2
5
BOTTOM VIEW
TO-78
1
2
3
4
6
7
S1
C
S2
Linear Integrated Systems
3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage -40 I
D
= -10µA
BV
SDS
Source to Drain Breakdown Voltage -40 I
S
= -10µA, V
BD
= 0V
V
GS
Gate to Source Voltage -3.0 -6.5 V
DS
= -15V, I
D
= -500µA
-2.0 -5.0 V
DS
= V
GS
, I
D
= -10µA
V
GS(th)
Gate to Source Threshold Voltage
-2.0 -5.0
V
V
DS
= -15V, I
D
= -500µA
I
GSSR
Reverse Gate Leakage Current 10 V
GS
= 40V
I
GSSF
Forward Gate Leakage Current -10 V
GS
= -40V
I
DSS
Drain Leakage Current "Off" -200 V
DS
= -15V
I
SDS
Source to Drain Leakage Current "Off" -400
pA
V
SD
= -15V, V
DB
= 0V
I
D(on)
Drain Current "On" -5.0 -30.0 mA V
DS
= -15V, V
GS
= -10V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261