Linear Integrated Systems
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
P-CHANNEL ENHANCEMENT MODE
MOSFET
3N163, 3N164
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163 -40V
3N164 -30V
Transient G-S Voltage (NOTE 1) ±125V
Drain Current 50mA
Storage Temperature -65°C to +200°C
Power Dissipation 375mW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS 3N163 3N164 UNITS CONDITIONS
MIN MAX MIN MAX
I
GSSF
Gate Forward Current -10 -10 pA V
GS
=-40V V
DS
=0 (3N163)
T
A
=+125°C -25 -25 V
GS
=-30V V
DS
=0 (3N164)
BV
DSS
Drain-Source Breakdown Voltage -40 -30 I
D
=-10µAV
GS
=0
BV
SDS
Source-Drain Breakdown Voltage -40 -30 V I
S
=-10µAV
GD
=0 V
BD
=0
V
GS(th)
Threshold Voltage -2.0 -5.0 -2.0 -5.0 V
DS
=V
GS
I
D
=-10µA
V
GS(th)
Threshold Voltage -2.0 -5.0 -2.0 -5.0 V
DS
=-15V I
D
=-10µA
V
GS
Gate Source Voltage -3.0 -6.5 -3.0 -6.5 V
DS
=-15V I
D
=-0.5mA
I
DSS
Zero Gate Voltage Drain Current 200 400 pA V
DS
=-15V V
GS
=0
I
SDS
Source Drain Current 400 800 V
DS
=15V V
GS
=V
DB
=0
r
DS(on)
Drain-Source on Resistance 250 300 ohms V
GS
=-20V I
D
=-100µA
I
D(on)
On Drain Current -5.0 -30 -3.0 -30 mA V
DS
=-15V V
GS
=-10V
g
fs
Forward Transconductance 2000 4000 1000 4000 µsV
DS
=-15V I
D
=-10mA f=1kHz
g
os
Output Admittance 250 250
C
iss
Input Capacitance-Output Shorted 2.5 2.5 pF V
DS
=-15V I
D
=-10mA f=1MHz
C
rss
Reverse Transfer Capacitance 0.7 0.7 (NOTE 2)
C
oss
Output Capacitance Input Shorted 3.0 3.0
1
2
3
4
CaseG
D
S
D S
G Case
18 X 30 MILS TO-72
Bottom View