FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE 75Ω
LOW CAPACITANCE 6pF
ABSOLUTE MAXIMUM RATINGS
1

@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5114 2N5115 2N5116
SYM. CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage 30 30 30 I
G
= 1µA, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage 5 10 3 6 1 4 V
DS
= -15V, I
D
= -1nA
V
GS(F)
Gate to Source Forward Voltage -0.7 -1 -1 -1 I
G
= -1mA, V
DS
= 0V
-1.0 -1.3 V
GS
= 0V, I
D
= -15mA
-0.7 -0.8 V
GS
= 0V, I
D
= -7mA VDS(on) Drain to Source On Voltage
-0.5 -0.6
V
V
GS
= 0V, I
D
= -3mA
-30 -90 V
DS
= -18V, V
GS
= 0V
I
DSS
Drain to Source Saturation Current
2

-15 -60 -5 -25
mA
V
DS
= -15V, V
GS
= 0V
I
GSS
Gate Leakage Current 5 500 500 500 V
GS
= 20V, V
DS
= 0V
I
G
Gate Operating Current -5 V
DG
= -15V, I
D
= -1mA
-10 -500 V
DS
= -15V, V
GS
= 12V
-10 -500 V
DS
= -15V, V
GS
= 7V ID(off) Drain Cutoff Current
-10 -500
pA
V
DS
= -15V, V
GS
= 5V
r
DS(on)
Drain to Source On Resistance 75 100 150 Ω V
GS
= 0V, I
D
= -1mA
G
S
D2
1
3
BOTTOM VIEW
TO-18


Linear Integrated Systems
2N5114 SERIES
SINGLE P-CHANNEL JFET











































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