FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5018
ZERO OFFSET VOLTAGE
LOW ON RESISTANCE 75Ω
ABSOLUTE MAXIMUM RATINGS
1

@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
2N5018 2N5019
SYM. CHARACTERISTIC TYP
MIN MAX MIN MAX
UNITS CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage 30 30 I
G
= 1µA, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage 10 5 V
DS
= -15V, I
D
= -1µA
-0.5 V
GS
= 0V, I
D
= -6mA
V
DS(on)
Drain to Source On Voltage
-0.5
V
V
GS
= 0V, I
D
= -3mA
I
DSS
Drain to Source Saturation Current
2
-10 -5 mA V
DS
= -20V, V
GS
= 0V
I
GSS
Gate Leakage Current 2 2 V
GS
= 15V, V
DS
= 0V
-10 -10
nA
V
DS
= -15V, V
GS
= 12V
I
D(off)
Drain Cutoff Current
-10 -10 µA V
DS
= -15V, V
GS
= 7V
I
DGO
Drain Reverse Current -2 -2 nA V
DG
= -15V, I
S
= 0A
r
DS(on)
Drain to Source On Resistance 75 150 Ω I
D
= -1mA, V
GS
= 0V
G
S
D2
1
3
BOTTOM VIEW
TO-18


Linear Integrated Systems
2N5018 SERIES
SINGLE P-CHANNEL
JFET SWITCH











































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