FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE r
DS(on)
≤ 30Ω
FAST SWITCHING t
ON
≤ 15ns
ABSOLUTE MAXIMUM RATINGS
1

@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N) -65 to 200°C
Storage Temperature (PN/SST) -55 to 150°C
Junction Operating Temperature (2N) -55 to 200°C
Junction Operating Temperature (PN/SST) -55 to 150°C
Maximum Power Dissipation
Continuous Power Dissipation (2N) 1800mW
Continuous Power Dissipation (PN/SST) 350mW
Maximum Currents
Gate Current 50mA
Maximum Voltages
Gate to Drain or Source (2N/PN) -40V
Gate to Drain or Source (SST) -35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391 4392 4393
SYM. CHARACTERISTIC TYP
MIN MAX MIN MAX MIN MAX
UNIT CONDITIONS
2N/PN -40 -40 -40
BV
GSS

Gate to Source
Breakdown Voltage
SST -35 -35 -35
I
G
= -1µA, V
DS
= 0V
2N/PN -4 -10 -2 -5 -0.5 -3 V
DS
= 20V, I
D
= 1nA
V
GS(off)

Gate to Source
Cutoff Voltage
SST -4 -10 -2 -5 -0.5 -3 V
DS
= 15V, I
D
= 10nA
V
GS(F)
Gate to Source Forward Voltage 0.7 1 1 1 I
G
= 1mA, V
DS
= 0V
0.25 0.4 V
GS
= 0V, I
D
= 3mA
0.3 0.4 V
GS
= 0V, I
D
= 6mA VDS(on) Drain to Source On Voltage
0.35 0.4
V
V
GS
= 0V, I
D
= 12mA
2N 50 150 25 75 5 30
PN 50 100 25 100 5 60 IDSS
Drain to Source
Saturation Current
2

SST 50 25 5
mA V
DS
= 20V, V
GS
= 0V
2N/SST -5 -100 -100 -100
I
GSS
Gate Leakage Current
PN -5 -1000 -1000 -1000
V
GS
= -20V, V
DS
= 0V
I
G
Gate Operating Current -5
pA
V
DG
= 15V, I
D
= 10mA
2N SERIES
D
S
G2
1
3
BOTTOM VIEW
TO-18
PN SERIES
TO-92
BOTTOM VIEW
123
DSG

SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S

Linear Integrated Systems
2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH











































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