Linear Integrated Systems
Linear Integrated Systems 4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261
ULTRA-HIGH INPUT IMPEDANCE
N-CHANNEL JFET
LS4117, 4118, 4119
FEATURES
LOW POWER I
DSS
<90 µA (2N4117)
MINIMUM CIRCUIT LOADING I
GSS
<1 pA (2N4117A Series)
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Gate-Source or Gate-Drain Voltage (NOTE 1) -40V
Gate-Current 50mA
Total Device Dissipation
(Derate 2mW/°C to 175°C) 300mW
Storage Temperature Range -65°C to +175°C
Lead Temperature
(1/16" from case for 10 seconds) 255°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
2N4117/A 2N4118 2N4119
FN4117/A 2N4118A 2N4119A
SYMBOL CHARACTERISTICS MIN MAX MIN MAX MIN MAX UNITS CONDITIONS
I
GSS
Gate Reverse Current -- -10 -- -10 -- -10 pA V
GS
= -20V V
DS
= 0
Standard only -- -25 -- -25 -- -25 nA
I
GSS
Gate Reverse Current -- -1 -- -1 -- -1 pA V
GS
=-20V V
DS
= 0
"A" Series only -- -2.5 -- -2.5 -- -2.5 nA
BV
GSS
Gate-Source Breakdown Voltage -40 -- -40 -- -40 -- I
G
=-1µA V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage -0.6 -1.8 -1 -3 -2 -6 V
DS
=10V I
D
= 1nA
I
DSS
Saturation Drain Current 0.03 0.09 0.08 0.24 0.20 0.60 mA V
DS
=10V V
GS
= 0
(NOTE 2) FN4117/A 0.015
g
fs
Common-Source Forward 70 210 80 250 100 330
Transconductance (NOTE 2)
g
os
Common-Source Output -- 3 -- 5 -- 10
Conductance
C
iss
Common-Source Input -- 3 -- 3 -- 3 V
DS
= 10V V
GS
= 0
Capacitance
C
rss
Common-Source Reverse -- 1.5 -- 1.5 -- 1.5
Transfer Capacitance
150°C
150°C
V
µmho
pF f=1MHz
f=1kHz
NOTES:
1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.
2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.)
1
2
3
4
CaseG
D
S
TO-72
Bottom View
D
S
G
C