BUZ908P
器件描述:POWER MOSFETS FOR AUDIO APPLICATIONS
文件大小:24.52KB,共2页
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器件资料摘要:
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907P
BUZ908P
V
DSX
Drain – Source Voltage
V
GSS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
1 32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
80 (
0
.
8
1
9
)
21.
46 (
0
.
8
4
5
)
6.
15
(
0
.
242)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
177)
Ma
x
.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
P–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N–CHANNEL
BUZ902P & BUZ903P
Pin 1 – Gate
TO-247
Pin 2 – Source
Case– Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907P
-220V
BUZ908P
-250V